2SC5706

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5706 DESCRIPTION ·Large current capacitance ·High-speed switching ·100% avalanche tested ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SA2039 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 7.5 A 15 W 0.8 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5706 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.0A; IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.0A; IB= 100mA VBE(sat) Base-Emitter Saturation Voltage IC= 2.0A; IB= 100mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE=2V COB Output Capacitance IE...