2SC6098

isc Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 4 A 15 W 0.8 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC6098 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 100mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 100mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 0.5A; V...