isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6099
DESCRIPTION ·Large current capacitance ·High-speed swi...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC6099
DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers,
inverter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6.5
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
3
A
15 W
0.8
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC6099
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 100mA
0.165 V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 100mA
V(BR)CEO
Collector-Emitter Voltage
Breakdown IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10uA; IC= 0
1.2
V
100
V
6.5
V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
1
μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
1
μA
hFE
DC Current Gain
IC= 0.1A; VCE= 5V
300
600
COB
Output Capacitance
IE= 0; VCB=...