isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6145A
DESCRIPTION ·High frequency multi emitter transistor ...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC6145A
DESCRIPTION ·High frequency multi emitter
transistor ·Small package(TO-3P) ·High power handling capacity ,160W ·Complement to Type 2SA2223A ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Signal
transistors for audio amplifiers ·Audio market
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
260 V
VCEO
Collector-Emitter Voltage
260 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
15 A
IB Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
4.0 A 160 W 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC6145A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector...
