2SD218

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low saturation voltage ·Excellent current gain linearity ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD218 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 0.7A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 4A; VCE= 5V hFE-2 DC Current Gain IC= 7A; VCE= 5V fT Current-Gain—Bandwidth Product  hFE-1Classifications M L K IC= 0.2A; VCE= 10V 30-60 45-90 60-120 2SD218 MIN TYP. MAX UNIT 0.6 1.5 V 1.2 1.5 V 0.5 mA 0.5 mA 30 60 120 20 40 10 MHz NOTICE： ISC reserves the rights to make changes of the content herein the ...