2SCR513PFRA

2SCR513P FRA Middle Power Transistor (50V / 1A) Parameter VCEO IC Value 50V 1A lFeatures 1)Low saturation voltage, typically 　VCE(sat)=350mV(Max.) 　(IC/IB=500mA/25mA) 2)High speed switching lOutline 　 SOT-89 　 SC-62 MPT3 lInner circuit Datasheet AEC-Q101 Qualified 　 　 　 　 　 lApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifications Part No. Package 2SCR513P FRA SOT-89 (MPT3) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 4540 T100 180 12 1000 NC 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/6 20160920 - Rev.001 2SCR513P FRA 　 　 　 　　 　 　 　 　 　 　 　 　 　 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP*1 PD*2 PD*3 Tj Tstg Values 50 50 6 1 2 0.5 2.0 150 -55 to +150 Unit V V V A A W W ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO IC = 100μA BVCEO IC = 1mA Emitter-base breakdown voltage BVEBO IE = 100μA Collector cut-off current ICBO VCB = 50V Emitter cut-off current IEBO VEB = 4V Collector-emitter saturation voltage VCE(sat)*4 IC = 500mA, IB = 25mA DC current gain hFE VCE = 2V, IC =...