600V High voltage High & Low-side / Gate Driver
600V High voltage High & Low-side, Gate Driver
BS2103F
General Description The BS2103F is a monolithic high and low si...
Description
600V High voltage High & Low-side, Gate Driver
BS2103F
General Description The BS2103F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.
Features Floating Channels for Bootstrap Operation to +600V Gate drive supply range from 10V to 18V Built-in Under Voltage Lockout for Both Channels 3.3V and 5.0V Input Logic Compatible Matched Propagation Delay for Both Channels Output in phase with input
Applications MOSFET and IGBT high side driver applications
Key Specifications
High-side floating supply voltage:
600V
Output voltage range: Min Output Current Io+/Io-:
10V t...
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