2N6213

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -350V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier, switching regulators, converters, inverters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -400 VCEO Collector-Emitter Voltage -350 VEBO Emitter-Base Voltage -6 IC Collector Current-Continuous -2 ICM Collector Current-Peak -5 IB Collector Current-Continuous -1 PC Collector Power Dissipation @ TC=25℃ 35 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W 2N6213 isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6213 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -350 V V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA ; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -125mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -125mA -1.4 V ICEV Collector Cutoff...