isc Silicon PNP Power Transistor
DESCRIPTION ·High voltage and large current capacity ·Ultrahigh-speed switching ·Small...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·High voltage and large current capacity ·Ultrahigh-speed switching ·Small and slim package permitting ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Complementary to 2SC4027
APPLICATIONS ·Converters , inverters and color TV audio output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-1.5
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
-2.5
A
15 W
1.0
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SA1552
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -0.5A; IB= -50mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10uA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10uA; IC= 0
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -0.1A; VCE= -5V
hFE-2
DC Current Gain
IC= -10mA; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Ba...