2SAR573D

isc Silicon PNP Power Transistor 2SAR573D DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤-0.4V@(IC=-1A,IB=-50mA) ·Complementary NPN types:2SCR573D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -6 A 10 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SAR573D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVCBO Collector-Base breakdown voltage IC=-100uA -50 V BVCEO Collector-Emitter breakdown voltage IC=-1mA -50 V BVEBO Emitter-Base breakdown voltage IE=-100uA -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.4 V -1.0 μA -1.0 μA hFE DC Current Gain IC= -0.1A; VCE= -3V 180 450 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 35 pF fTNOTE Current-Gain—Bandwidth Product NOTE:Pulsed IC= -0.2A; VCE= -10V,f= 100MHz 300 MHz ...