SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDK08G65C5
Final Data Sheet
Rev. 2.1, 2017-08-...
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC
Schottky Diode
IDK08G65C5
Final Data Sheet
Rev. 2.1, 2017-08-11
Power Management & Multimarket
5th Generation thinQ!™ SiC
Schottky Diode
1
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. The Infineon proprietary diffusion soldering process,
already introduced with G3 is now combined with a new, more compact design and
thin-wafer technology. The result is a new family of products showing improved
efficiency over all load conditions, resulting from both the improved thermal
characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 18 mA2)
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced...