isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VC...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·All semelab hermetically sealed products,can be processed
in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and JAN specifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current-Continuous
-3
A
PC
Collector Power Dissipation@TC=25℃
75
W
TJ, Tstg
Operating and Storage Junction Temperature Range
-65~+150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.67 ℃/W
2N3174
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -0.14A
ICEO
Collector Cutoff Current
VCE= -100V; IB=0
IEBO
Emitter Cutoff Current
VEB= -10V; IC=0
hFE
DC Current Gain
IC= -1A ; VCE= -3V
2N3174
MIN MAX UNIT
-0.75 V
-1.8
V
-0.1 mA
-0.1 mA
12
36
Notice: ISC reserves the rights to make changes of the content herein the datashe...