isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N3197
DESCRIPTION ·Excellent Safe Operating Area ·With TO-3 p...
isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2N3197
DESCRIPTION ·Excellent Safe Operating Area ·With TO-3 package ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For medium-speed switching and amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-10 V
IC Collector Current-Continuous
-5 A
PC TJ, Tstg
Collector Power Dissipation@TC=25℃
75
Operating and Storage Junction Temperature Range
-65~+200
W ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.17 ℃/W
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isc Silicon
PNP Power
Transistors
INCHANGE Semiconductor
2N3197
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMB...
