INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION ·DC Current Gain-
: hFE=20-140@IC= -4A ·Collector-E...
INCHANGE Semiconductor
isc Silicon
PNP Power
Transistors
DESCRIPTION ·DC Current Gain-
: hFE=20-140@IC= -4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ IC= -4A
·
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70 V
VCEO
Collector-Emitter Voltage
-24 V
VEBO
Emitter-Base Voltage
-20 V
IC Collector Current-Continuous
PC
Collector Power Dissipation @TC=55℃
TJ Junction Temperature
-6 A 20 W 150 ℃
Tstg Storage Temperature
-55-150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.75
UNIT ℃/W
isc Product Specification
3AD53
isc website:www.iscsemi.com
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INCHANGE Semiconductor
isc Silicon
PNP Power
Transistors
isc Product Specification
3AD53
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
COND...