isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
APPLICATIONS ·Designed for general purpose high power switch and
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
PC
Collector Power Dissipation@TC=25℃ 150
W
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.17 ℃/W
2N3240
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1.33A
VBE(on) Base-Emitter On Voltage
IC= 10A; VCE= 10V
hFE
DC Current Gain
IC= 10A; VCE= 10V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 4V; f= 1.0MHz
2N3240
MIN MAX UNIT
160
V
1
V
2
V
8.5
25
1.0
MHz
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide f...
