2N3863

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for medium-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7.5 A PC Collector Power Dissipation@TC=25℃ 117 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.5 ℃/W 2N3863 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC=3A; IB= 0.2A hFE DC Current Gain *:Pulse test:Pulse width=300us,duty cycle≤2% IC= 3A; VCE= 2V 2N3863 MIN MAX UNIT 50 V 5 mA 1.0 V 2.0 V 30 60 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is pres...