2N3863 Transistor Datasheet

2N3863 Datasheet, PDF, Equivalent


Part Number

2N3863

Description

Silicon NPN Power Transistor

Manufacture

Inchange Semiconductor

Total Page 2 Pages
Datasheet
Download 2N3863 Datasheet


2N3863
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N3863
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for medium-speed switching and
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70 V
VCEO
Collector-Emitter Voltage
50 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
7.5 A
PC
Collector Power Dissipation@TC=25
117
W
TJ Junction Temperature
-65~200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

2N3863
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N3863
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0
IEBO Emitter Cutoff Current
VEB= 7V; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC=3A; IB= 0.2A
hFE DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 3A; VCE= 2V
MIN MAX UNIT
50 V
5 mA
1.0 V
2.0 V
30 60
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Features isc Silicon NPN Power Transistor INCHAN GE Semiconductor 2N3863 DESCRIPTION · Excellent Safe Operating Area ·Low Col lector-Emitter Saturation Voltage ·100 % avalanche tested ·Minimum Lot-to-Lot variations for robust device performan ce and reliable operation. APPLICATION S ·Designed for medium-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA METER VALUE UNIT VCBO Collector-Bas e Voltage 70 V VCEO Collector-Emitte r Voltage 50 V VEBO Emitter-Base Vol tage 7V IC Collector Current-Continuo us 7.5 A PC Collector Power Dissipat ion@TC=25℃ 117 W TJ Junction Tempe rature -65~200 ℃ Tstg Storage Tempe rature -65~200 ℃ THERMAL CHARACTERI STICS SYMBOL PARAMETER Rth j-c Therm al Resistance,Junction to Case MAX UNI T 1.5 ℃/W isc website:www.iscsemi. com 1 isc & iscsemi is registered trad emark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3863 ELECTR ICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO.
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