Document
isc Silicon NPN Power Transistor
isc Product Specification
APT13005SU-G1
DESCRIPTION · High Collector-Emitter Voltage
: VCES= 700V(Min.) ·Fast Switching Speed ·Collector Saturation Voltage
: VCE(sat) = 0.3V(Max) @ IC= 1.0A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Battery charges for Mobile Phone of BCD Solution ·Power supply for DVD/STB of BCD Solution ·Driver for LED Lighting of BCD Solution
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
700 V
VCEO
Collector-Emitter Voltage
450 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
3.2 A
ICM Collector Current-Peak
6.4 A
IB Base Current
PC
Collector Power Dissipation Tc=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
1.6 20 150 -55~150
A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 6.25 ℃/W
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