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BT131

Inchange Semiconductor

Triacs

isc Triacs BT131 FEATURES ·Glass passivated,sensitive gate triacs in a plastic envelope ·Intended for use in general p...


Inchange Semiconductor

BT131

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isc Triacs BT131 FEATURES ·Glass passivated,sensitive gate triacs in a plastic envelope ·Intended for use in general purpose bidirectional switching and phase control applications. ·These devices are intended to be interfaced directly to microcontrollers,logic intergrated circuits and other low power gate trigger circuit. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN VDRM Repetitive peak off-state voltage 600 VRRM Repetitive peak off-state voltage 600 IT(RMS) RMS on-state current (full sine wave) Tlead≤ 51℃ 1 ITSM Non-repetitive peak on-state current 10 PGM Peak gate power dissipation 5 PG(AV) Average gate power dissipation 0.5 Tj Operating junction temperature 110 Tstg Storage temperature -40~150 UNIT V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS VDRM VRRM ID Repetitive peak off-state voltage ID=0.1mA Repetitive peak reverse voltage ID=0.5mA Off-state leakage current VD= VDRM(max), Tj= 125℃ Ⅰ IGT Gate trigger current Ⅱ VD=12V; IT= 0.1A Ⅲ Ⅳ VTM On-state voltage IH Holding current VGT Gate trigger voltage IT=2.0A IGT=0.1A ,VD= 12V VD=12V ; RL=100Ωall quadrant MIN MAX UNIT 600 V 600 V 0.5 mA 3 3 mA 3 7 1.7 V 5 mA 1.5 V isc website: www.iscsemi.com isc & iscsemi is registered trademark isc Triacs BT131 NOTICE: ISC reserves the rights to make changes of the content here...




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