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SPD08P06PG

Infineon

Power-Transistor


Description
SIPMOS® Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175°C operating temperature Pb-free lead finishing; RoHS compliant ° Qualified according to AEC Q101 SPD08P06P G Product Summary V DS R DS(on),max ID -60 V 0.3 Ω -8.8 A PG-TO252-3 Type Package SPD08P06PG PG-TO252-3 Tape and reel information 1000 pcs ...



Infineon

SPD08P06PG

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