MUR550PF

Ultrafast Rectifier INCHANGE Semiconductor MUR550PF FEATURES ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current 520 V 5A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 100 wave, single phase, 60Hz) A PD Maximum power dissipation 44.6 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Fast Recovery Rectifier THERMAL CHARACTERISTICS SYM...