IPU80R1K4P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V su...
IPU80R1K4P7
MOSFET
800VCoolMOSªP7Power
Transistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfromInfineon’sover18years pioneeringsuperjunctiontechnologyinnovation.
Features
Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss Best-in-classDPAKRDS(on) Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V IntegratedZenerDiodeESDprotection Fullyqualifiedacc.JEDECforIndustrialApplications Fullyoptimizedportfolio
Benefits
Best-in-classperformance Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts Easytodriveandtoparallel BetterproductionyieldbyreducingESDrelatedfailures Lessproductionissuesandreducedfieldreturns Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended.
IPAK
tab
12 3
Drain Pin 2, Tab Gate Pin 1
Source Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
800
V
RDS(on),max
1.4
Ω
Qg,typ
10
nC
ID
4
A
Eoss @ 500V
0.9
µJ
VGS(th),t...