MR45V064B

MR45V064B 64k(8,192-Word × 8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI FEDR45V064B-01 Issue Date: Jan 08, 2016 GENERAL DESCRIPTION The MR45V064B is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V064B is accessed using Serial Peripheral Interface.Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks, such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and the power consumption during a write can be reduced significantly. The MR45V064B can be used in various applications, because the device is guaranteed for the write/read tolerance of 1012 cycles per bit and the rewrite count can be extended significantly. FEATURES 8,192-word × 8-bit configuration (Serial Peripheral Interfa...