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PTAC260302FC
Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz
Description
The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main) and a 20-W (peak) transistor, making it ideal for asymmetric Doherty amplifier designs. Features include input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
ACP Up and ACP Low (dBc) Drain Efficiency(%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA,
ƒ = 2620, 2655, 2690 MHz,
3GPP WCDMA signal, 10 dB PAR, -10 3.84 MHz bandwidth 60
2620 MHz
-20
2655 MHz 2690 MHz
50
-30 40
-40 30
Efficiency
-50
ACP Up
20
ACP Low
-60 28
c260302f c_gr1
10
30 32 34 36 38 40 42 44
Average Output Power (dBm)
PTAC260302FC Package H-37248H-4
Featur.