PTAC240502FC

PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, VGS1 = 2.6 V, VGS2 = 1.3 V, ƒ = 2400 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 16 60 15 Gain 14 50 40 13 Efficiency 12 30 20 11 10 10 26 ptac240502fc_g1 0 30 34 38 42 46 Output Power (dBm) PTAC240502FC Package H-37248-4 Features Input matched Asymmetric Doherty design - Main: P1dB = 17 W Typ - Peak: P1dB = 33 W Typ Typical P...