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PTFB183404E Dataheets PDF



Part Number PTFB183404E
Manufacturers Infineon
Logo Infineon
Description High Power RF LDMOS Field Effect Transistors
Datasheet PTFB183404E DatasheetPTFB183404E Datasheet (PDF)

PTFB183404E PTFB183404F High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance a.

  PTFB183404E   PTFB183404E


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