PTFB193404F

PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340‑watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB193404F Package H-37275-6/2 IMD, ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz -20 -25 -30 -35 -40 -45 -50 -55 -60 36 40 Efficiency 35 30 IMD Low 25 20 ACPR 15 10 IMD Up 5 38 40 42 44 46 48 50 Average Output Power (dBm) 0 52 Features Broadband internal matching Wide video bandwidth Typical single-carrier WCDMA performance, 1990 MHz, 30 V - O...