Thermally-Enhanced High Power RF LDMOS FETs
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz
Descript...
Description
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz
Description
The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB191501E Package H-36248-2
PTFB191501F Package H-37248-2
PTFB191501E PTFB191501F
IMD (dBc)
Efficiencydiscontinu(%)ed products
Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
-20 40
-25
Efficiency
35
-30
IMD Up
30
-35 25
-40 20
-45 15 IMD Low
-50 10
-55
ACPR
5
-60 0 31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
RF Characteristics
Features
Broadband internal matc...
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