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PTFB211803EL Dataheets PDF



Part Number PTFB211803EL
Manufacturers Infineon
Logo Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet PTFB211803EL DatasheetPTFB211803EL Datasheet (PDF)

PTFB211803EL PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performanc.

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PTFB211803EL PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211803EL H-33288-6 PTFB211803FL H-34288-4/2 IMD (dBc) / ACPR (dBc) Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -20 40 -25 35 -30 Efficiency 30 -35 25 -40 IMD Up 20 -45 ACPR 15 -50 10 IMD Low -55 5 -60 0 31 33 35 37 39 41 43 45 47 49 Output Power (dBm) Features • Broadband internal matching • Typical two-carrier WCDMA performance at 2170 MH.


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