DatasheetsPDF.com

PTFB213004F

Infineon

High Power RF LDMOS Field Effect Transistor


Description
PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. PTFB...



Infineon

PTFB213004F

File Download Download PTFB213004F Datasheet


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)