PTFC270051M
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
Description
The PTFC270051M is an un...
PTFC270051M
High Power RF LDMOS Field Effect
Transistor 5 W, 28 V, 900 – 2700 MHz
Description
The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS
transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.
PTFC270051M Package PG-SON-10
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA
3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW
22
Gain 21
60 50
20 40
19 30
18 Efficiency 17
2110 MHz 2140 MHz 2170 MHz
20 10
16
c270051m-gr1.3
0
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Features
Unmatched
Typical CW performance, 940 MHz, 28 V - Output power (P1dB) = 6.5 W - Gain = 23 dB - Efficiency = 62%
Typical CW performance, 2170 MHz, 28 V - Output power (P1dB) = 7.3 W - Gain = 20.3 dB - Efficiency = 60%
Typical CW performance, 2655 MHz, 28 V - Output power (P1dB) ...
