Thermally-Enhanced High Power RF LDMOS FET
PTFC260202FC
Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz
Description
The PTFC260202FC integ...
Description
PTFC260202FC
Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz
Description
The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFC260202FC Package H-37248-4
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 0.17 A, ƒ = 2620 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
20 50
19 Gain
18
40 30
17
Efficiency
20
16 10
15 0 30 31 32 33 34 35 36 37 38 39 40
Output Power (dBm)
Features
Broadband input matching
Typical CW performance, 2620 MHz, 28 V - Output power at P1dB = 25 W - Efficiency = 57% - Linear Gain = 19.4 dB
Capable of handling 10:1 VSWR @28 V, 25 W (CW) output power
Integrated ESD protection
Human Body Model Class 1B (per ANSI/ESDA...
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