Thermally-Enhanced High Power RF LDMOS FET
PTVA093002TC
Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz
Description
The PTVA093002TC is a 3...
Description
PTVA093002TC
Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz
Description
The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design, input matching, and a thermally-enhanced surface-mount package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA093002TC Package H-49248H-4, formed leads
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier 3GPP WCDMA
VDD = 50 V, IDQ = 400 mA, ƒ = 758 MHz 3.84 MHz bandwidth, 10 dB PAR
24
20 Gain
16
Efficiency
60 40 20
12 0
8 PAR @ 0.01% CCDF
4
-20 -40
0 25
a093002tc-gr1a
-60
30 35 40 45 50 55
Average Output Power (dBm)
Features
Typical CW performance in a combined-lead 50-ohm single-ended fixture, 780 MHz, 50 V - Output power at P1dB = 158 W - Gain = 18.2 dB - Efficien...
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