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PXAC241702FC Dataheets PDF



Part Number PXAC241702FC
Manufacturers Infineon
Logo Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet PXAC241702FC DatasheetPXAC241702FC Datasheet (PDF)

PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz Description The PXAC241702FC is a 28 V LDMOS FET with an asymm­­ etrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliab.

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PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz Description The PXAC241702FC is a 28 V LDMOS FET with an asymm­­ etrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC241702FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 2300 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW 24 Efficiency 20 16 Gain 75 50 25 12 0 8 PAR @ 0.01% CCDF 4 -25 -50 0 -75c241702fc-gr1a 25 30 35 40 45 50 55 Features • Asymmetrical Doherty design - Main: P1dB = 60 W Typ - Peak: P1dB = 90 W Typ • Broadband internal input and output matching • Typical pulsed CW performance, 2350 M.


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