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PXAC261002FC

Infineon

Thermally-Enhanced High Power RF LDMOS FET


Description
PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features include dual-path design, high gain and a thermally-enhanced package wit...


Infineon

PXAC261002FC

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