PXFC193808SV

PXFC193808SV Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 – 1880 MHz Description The PXFC193808SV is a 380-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC193808SV Package H-37275G-6/2 Peak/Average (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2850 mA, ƒ = 1880 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 20 Gain 16 12 40 Efficiency 20 0 8 -20 4 PAR @ 0.01% CCDF -40 0 -60c193808sv-gr1c 25 30 35 40 45 50 55 Average Output Power (dBm) Features Broadband internal input and output matching Typical pulsed CW performance, 1842.5 MHz, 28 V, - Output power at P1dB = 380 W - Efficiency = 5...