BGU7045 low-noise amplifier Datasheet

BGU7045 Datasheet, PDF, Equivalent


Part Number

BGU7045

Description

1 GHz wideband low-noise amplifier

Manufacture

NXP

Total Page 11 Pages
Datasheet
Download BGU7045 Datasheet


BGU7045
BGU7045
1 GHz wideband low-noise amplifier with bypass
Rev. 2 — 26 May 2014
Product data sheet
1. Product profile
1.1 General description
The BGU7045 MMIC is a 3.3 V wideband amplifier with bypass mode. It is designed
specifically for high linearity, low-noise applications over a frequency range of 40 MHz to
1 GHz. It is especially suited for Set-Top Box applications.
The LNA is housed in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Voltage supply of 3.3 V
Internally biased
Programmable between Gp = 14 dB and bypass
Flat gain between 40 MHz and 1 GHz
Noise figure of 2.8 dB
High linearity with an IP3O of 29 dBm
75 input and output impedance
Power-down during bypass mode
Bypass mode current consumption < 5 mA
ESD protection > 2 kV Human Body Model (HBM) and >1.5 kV Charged Device Model
(CDM) on all pins
1.3 Applications
Terrestrial and cable Set-Top Boxes (STB)
Silicon and “Can” tuners
Personal Video Recorders (PVR) and Digital Video Recorders (DVR)
Home networking and in-house signal distribution

BGU7045
NXP Semiconductors
BGU7045
1 GHz wideband low-noise amplifier with bypass
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C; typical values at VCC = 3.3 V; ZS = ZL = 75 ; Rbias = 18 ; 40 MHz f1 1000 MHz.
Symbol Parameter
Conditions
Min Typ Max Unit
VCC
ICC(tot)
supply voltage
total supply current
RF input AC coupled
Gp = 14 dB mode
bypass mode
3.1
[1] 30
[1] -
3.3 3.5
34 38
3-
V
mA
mA
Tamb
NF
ambient temperature
noise figure
Gp = 14 dB mode
bypass mode
40 - +85 C
[1] -
2.8 -
dB
[1] -
2.5 -
dB
PL(1dB) output power at 1 dB gain
compression
Gp = 14 dB mode;
1 GHz
[1] -
13 -
dBm
IP3O output third-order intercept point Gp = 14 dB mode
[1][2] -
29 -
dBm
[1] Mode depends on setting of VCTRL; see Table 8.
[2] The fundamental frequency (f1) is 1000 MHz. The intermodulation product (IM3) is 2 f2 f1, where
f2 = f1 1 MHz. Input power Pi = 10 dBm.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
RF_OUT
VCC
n.c.
CTRL
GND
RF_IN
Simplified outline Graphic symbol
654
32
61
123
54
sym141
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BGU7045
-
plastic surface-mounted package; 6 leads
Version
SOT363
4. Marking
Table 4. Marking codes
Type number
BGU7045
Marking code
LK*
Description
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
BGU7045
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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Features BGU7045 1 GHz wideband low-noise amplif ier with bypass Rev. 2 — 26 May 2014 Product data sheet 1. Product profil e 1.1 General description The BGU7045 M MIC is a 3.3 V wideband amplifier with bypass mode. It is designed specificall y for high linearity, low-noise applica tions over a frequency range of 40 MHz to 1 GHz. It is especially suited for S et-Top Box applications. The LNA is hou sed in a 6-pin SOT363 plastic SMD packa ge. 1.2 Features and benefits  Volta ge supply of 3.3 V  Internally biase d  Programmable between Gp = 14 dB a nd bypass  Flat gain between 40 MHz and 1 GHz  Noise figure of 2.8 dB High linearity with an IP3O of 29 dBm  75  input and output impedance  Power-down during bypass mode  B ypass mode current consumption < 5 mA ESD protection > 2 kV Human Body Mod el (HBM) and >1.5 kV Charged Device Mod el (CDM) on all pins 1.3 Applications Terrestrial and cable Set-Top Boxes (STB)  Silicon and “Can” tuners  Personal Video Recor.
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