CHA1010-99F

CHA1010-99F 7-11GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1010-99F is a monolithic two-stage wide-band low noise amplifier. It is designed for a wide range of applications, from professional to commercial communication systems. The circuit is manufactured with a pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. IN VG VD OUT Main Features ■ Broadband performance: 7-11GHz ■ 1.0dB Noise Figure ■ 32dB Linear Gain ■ +5.5dBm Pout at 1dB gain compression ■ DC bias: Vd=5Volt, Id=30mA ■ Chip size 2.57x1.79x0.1mm -40°C, +25°C, +85°C Main Electrical Characteristics Tamb= +25°C. Vd = +5.0V Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB compression Min Typ Max Unit 7 11 GHz 32 dB 1.0 dB 5.5 dBm Ref. : DSCHA10103333 - 29 Nov 13 1/10 Specifications subject to change without notice United Monolithic Semiconductors S...