Document
CHA5115-QDG
RoHS COMPLIANT
X-band Medium Power Amplifier
GaAs Monolithic Microwave IC
Gain (dB)
Description
The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 30% power added efficiency at 3dB gain compression.
It is supplied in RoHS compliant SMD package.
UUMMSS YYYAAWY53WW16168W785AG
Main Features
Frequency band: 8-12GHz Output power: 28dBm @ 3dBcomp Linear gain: 21.5dB High PAE: 30% @ 3dBcomp Quiescent bias point: Vd=8V, Id=190mA 24L-QFN4x4 MSL3
Pout (dBm) & PAE (%)
35 33 31 29 27 25 23 21 19 17 15
7
25
23
21
19
17
15
PAE_3dBcomp @ Temp=25°C Pout_3dBcomp @ Temp=25°C Linear Gain @ Temp=25°C
13 11 9 7
5
8 9 10 11 12 13 Frequency (GHz)
Main Characteristics
Tamb = 20°C, Vd = 8V, Id (Quiescent) = 190mA, Drain Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range
8 12 GH.