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CHA5115-QDG Dataheets PDF



Part Number CHA5115-QDG
Manufacturers United Monolithic Semiconductors
Logo United Monolithic Semiconductors
Description X-band Medium Power Amplifier
Datasheet CHA5115-QDG DatasheetCHA5115-QDG Datasheet (PDF)

CHA5115-QDG RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Gain (dB) Description The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 30% power added efficiency at 3dB gain compression. It is supplied in RoHS compliant SMD package. UUMMSS YYYAAWY53WW16168W785AG Main Features  Frequency band: 8-12GHz  Output power: 28dBm @ 3dBcomp  Linear gain: 21.5dB.

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CHA5115-QDG RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Gain (dB) Description The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 30% power added efficiency at 3dB gain compression. It is supplied in RoHS compliant SMD package. UUMMSS YYYAAWY53WW16168W785AG Main Features  Frequency band: 8-12GHz  Output power: 28dBm @ 3dBcomp  Linear gain: 21.5dB  High PAE: 30% @ 3dBcomp  Quiescent bias point: Vd=8V, Id=190mA  24L-QFN4x4  MSL3 Pout (dBm) & PAE (%) 35 33 31 29 27 25 23 21 19 17 15 7 25 23 21 19 17 15 PAE_3dBcomp @ Temp=25°C Pout_3dBcomp @ Temp=25°C Linear Gain @ Temp=25°C 13 11 9 7 5 8 9 10 11 12 13 Frequency (GHz) Main Characteristics Tamb = 20°C, Vd = 8V, Id (Quiescent) = 190mA, Drain Pulse width=100µs, Duty cycle = 20% Symbol Parameter Min Typ Max Unit Fop Operating frequency range 8 12 GH.


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