10-16 GHz Medium Power Amplifier
CHA5266-99F
10-16 GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5266-99F is a three stage...
Description
CHA5266-99F
10-16 GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Main Features
■ Broadband performances: 10-16GHz. ■ 23dB Linear Gain. ■ 26.5dBm output power @ 1dB comp. ■ 36dBm OIP3. ■ DC bias: Vd=5.0Volt@Id=360mA. ■ Chip size 1.81x1.37x0.1mm.
Gain and retun losses (dB)
RF IN
VD1
VD2
VD3
RF OUT
VG1
VG2
VG3
30
25
20 S21 15 S11 10 S22
5
0
-5
-10
-15
-20
-25 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
OIP3 Output IP3
Pout Output...
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