CHA8610-99F

CHA8610-99F 15W X Band High Power Amplifier GaN Monolithic Microwave IC Description The CHA8610-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 15W of saturated output power and 40% of power added efficiency. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. In V+ STG1 STG2 V- Out Main Features ■ Frequency range: 8.5-11GHz ■ High output power: 15W ■ High PAE: 40% ■ Linear Gain: 24dB ■ DC bias: Vd=30Volt @Id=0.68A ■ Chip size 5.08x2.75x0.1mm ■ Available in bare die 45 50 44 45 43 40 Output power (dBm) 42 35 41 30 40 Pout @ Pin=23dBm 25 39 PAE @ Pin=23dBm 20 38 15 37 10 36 5 35 0 8 8.5 9 9.5 10 10.5 11 11.5 Frequency (GHz) Pout and PAE versus frequency for Pulsed mode Power a...