CHZ015A-QEG

CHZ015A-QEG 15W L-Band Driver GaN HEMT on Sic in SMD leadless package Description The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed radar application. The CHZ015A-QEG is proposed on a 0.5µm gate length GaN HEMT process. It is based on Quasi MMIC technology. It is supplied in RoHS compliant SMD package. Main Features ■ Wide band capability: 1.2 - 1.4GHz ■ Pulsed operating mode ■ High power: > 15W ■ High PAE: up to 55% ■ DC bias: VDS=45V @ I D_Q=100mA ■ Low cost package: 24L-QFN4x5 ■ MTTF > 106 hours @ Tj=200°C VDS = 45V, ID_Q = 100mA, Pin = 28dBm Pulsed mode (25µs-10%) Performances on the connector access planes Main Electrical Characteristics Tamb.= +25°C, pulsed mode Symbol Parameter Freq Frequency range GSS POUT PAE Small Signal Gain Output Power Max Power Added Efficiency IdSAT Saturated Drai...