CHZ180A-SEB
180W L-Band HPA
GaN HEMT on SiC in SEB Package
Description
The CHZ180A-SEB is an input matched and output p...
CHZ180A-SEB
180W L-Band HPA
GaN HEMT on SiC in SEB Package
Description
The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility
Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application. The CHZ180A-SEB is proposed on a 0.5µm gate length GaN HEMT process. It is based on Quasi-MMIC technology. It is available in a hermetic flange ceramic metal power package providing low parasitic and low thermal resistance.
Main Features
■ Wide band capability: 1.2 – 1.4GHz ■ Pulsed operating mode ■ High power: > 180W ■ High PAE: up to 53% ■ DC bias: VDS = 45V @ ID_Q = 1.3A ■ MTTF > 106 hours @ Tj = 200°C ■ RoHS Hermetic Flange Ceramic package
Pout(dBm) & PAE(%)
Power Gain (dB)
VDS = 45V, ID_Q = 1.3A, Pin = 39dBm Pulsed mode (100µs-10%)
60 25
58
Pulsed Mode
24
56 54 POUT
23 22
52 21
50 20
48 46
PAE
19 18
44 17
42 16
40 15
38
Gain
14
...