SI4558DY

SMD Type Complementary Power Trench MOSFET SI4558DY (KI4558DY) MOSFET ■ Features ● N-Channel：VDS=30V ID=6A ● RDS(ON) ＜ 40mΩ (VGS = 10V) ● RDS(ON) ＜ 60mΩ (VGS = 4.5V) ● P-Channel：VDS=-30V ID=-6A ● RDS(ON) ＜ 40mΩ (VGS =-10V) ● RDS(ON) ＜ 70mΩ (VGS =-4.5V) SOP-8 +0.040.21 -0.02 1.50 0.15 1 Source1 2 Gate1 3 Source2 4 Gate2 5 Drain 6 Drain 7 Drain 8 Drain D S2 S1 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current @ TJ=150℃ (Note.1) Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient (Note.1) Junction Temperature Storage Temperature Range Ta = 25 ℃ Ta = 70 ℃ Ta = 25 ℃ Ta = 70 ℃ Note.1:Surface Mounted on FR4 Board, t ≤ 10 sec. G2 G1 Symbol VDS VGS ID IDM PD RthJA TJ Tstg N-Channel P-Channel 30 -30 ±20 6 -6 4.7 -4.7 30 -30 2.4 1.5 52 150 -55 to 150 Unit V A W ℃/W ℃ ■ Marking Marking 4558 KA**** www.kexin.com.cn 1 SMD Type MOSFET...