Dual N/P-Channel MOSFET
AUTOMOTIVE GRADE
AUIRF9952Q
Features Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Du...
Description
AUTOMOTIVE GRADE
AUIRF9952Q
Features Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Full Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
S1
N-CHANNEL MOSFET 18
D1
N-CH P-CH
G1 2 S2 3
V7 D1
DSS
6 D2
30V -30V
G2 4
5 D2 RDS(on) max. 0.10 0.25
P-CHANNEL MOSFET
Top View
ID
3.5A -2.3A
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8 A...
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