Document
AUTOMOTIVE GRADE
AUIRF7341Q
Features Advanced Planar Technology Ultra Low On-Resistance Logic Level Gate Drive Dual N Channel MOSFET Surface Mount Available in Tape & Reel 175°C Operating Temperature Lead-Free, RoHS Compliant Automotive Qualified *
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Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capa.