IPAN65R650CE

IPAN65R650CE MOSFET 650VCoolMOS™CEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pb-freeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 650 mΩ ID. 10.1 A Qg.typ 23 nC ID,pulse 18 A Eoss@400V 2 µJ Type/OrderingCode IPAN65R650CE Package PG-TO 220 FullPAK Narrow Lead Marking 65S650CE PG-TO220FP Drain Pin 2, Tab Gate Pin 1 Source Pin 3 RelatedLinks see Appendix A Final Data Sheet Final Data Sheet 1 Rev.2.1,2016-11-28 1 Rev.2.2, 2018...