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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
EPITAXIAL SILICON POWER TRANSISTORS
ECB
BD233 BD235 BD237 NPN
BD234 BD236 BD238 PNP
TO126 Plastic Package
Intended for use in Medium Power Linear Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE=1KΩ) Emitter Base Voltage Collector Current Collector Peak Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC
Derate above 25ºC Operating and Storage Junction Temperature Range
SYMBOL
VCBO VCEO VCER VEBO
IC ICM PD PD
Tj, Tstg
BD233 BD234
45 45 45
BD235 BD236
60 60 60 5.0 2.0 6.0
25 1.25 10
BD237 BD238
100 80 100
- 65 to +150
UNIT
V V V V A A W W mW/ ºC
ºC
THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air
Rth (j-c) Rth (j-a)
5.0 ºC/W 100 ºC/W
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut .