N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB013N10RE3
Spec. No. : C056E3 Issued Date : 2016.11...
Description
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB013N10RE3
Spec. No. : C056E3 Issued Date : 2016.11.01 Revised Date : Page No. : 1/ 8
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
100V 53A
9.6A 11.8 mΩ(typ) 13.4 mΩ(typ)
Symbol
MTB013N10RE3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
Package
Shipping
MTB013N10RE3-0-UB-X
TO-220 (Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name
MTB013N10RE3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C056E3 Issued Date : 2016.11.01 Revised D...
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