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BSC0923NDI Dataheets PDF



Part Number BSC0923NDI
Manufacturers Infineon
Logo Infineon
Description Dual N-Channel OptiMOS MOSFET
Datasheet BSC0923NDI DatasheetBSC0923NDI Datasheet (PDF)

Dual N-Channel OptiMOS™ MOSFET Features Product Summary • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter VDS • Logic level (4.5V rated) RDS(on),max VGS=10 V • 100% avalanche tested ID • Qualified according to JEDEC1) for target applications VGS=4.5 V • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 VPhase BSC0923NDI Q1 Q2 30 30 V 5 2.8 mW 7 3.7 40 40 A Type BSC0923NDI Package PG-TISON-8 Marking 0923NDI Maximum ratin.

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Dual N-Channel OptiMOS™ MOSFET Features Product Summary • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter VDS • Logic level (4.5V rated) RDS(on),max VGS=10 V • 100% avalanche tested ID • Qualified according to JEDEC1) for target applications VGS=4.5 V • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 VPhase BSC0923NDI Q1 Q2 30 30 V 5 2.8 mW 7 3.7 40 40 A Type BSC0923NDI Package PG-TISON-8 Marking 0923NDI Maximum ratings, at T j=25 °C, unless otherwise specified 2) Parameter Continuous drain current Pulsed drain current5) Avalanche energy, single pulse Gate source voltage Power dissipation Symbol Conditions ID I D,pulse E AS V GS P tot T C=70 °C, VGS=10V T A=25 °C, VGS=4.5V3) T A=70 °C, VGS=4.5V3) T A=25 °C, VGS=10V4) T C=70 °C Q1: I D=20 A, Q2: I D=20 A, R GS=25 W T A=25 °C2) Value Q1 Q2 40 40 17 32 14 25 10 15 160 160 9 20 ±20 2.5 2.5 Unit A mJ V W T A=25 °C, minimum footpr.


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