BSC159N10LSF G
OptiMOS™2 Power-Transistor
Features • N-channel, logic level • Very low gate charge x R DS(on) product (...
BSC159N10LSF G
OptiMOS™2 Power-
Transistor
Features N-channel, logic level Very low gate charge x R DS(on) product (FOM) Low on-resistance R DS(on) 150 °C operating temperature
Product Summary V DS R DS(on),max ID
100 V 15.9 mΩ 63 A
PG-TDSON-8
Pb-free lead plating; RoHS compliant; Halogen Free Qualified according to JEDEC1) for target application
Ideal for high-frequency switching and synchronous rectification
Halogen-free according to IEC61249-2-21
Type BSC159N10LSF G
Package PG-TDSON-8
Marking 159N10LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C T C=100 °C
T A=25 °C, R thJA=50 K/W2)
Pulsed drain current3) Avalanche energy, single pulse Gate source voltage
I D,pulse E AS V GS
T C=25 °C I D=50 A, R GS=25 Ω
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
63 40
9.4
252 ...
